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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1701A
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for power management applications and Li-ion battery application.
PACKAGE DRAWING (Unit : mm)
8
5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain
FEATURES
* 2.5 V gate drive and low on-resistance RDS(on)1 = 27 m (MAX.) (VGS = 4.0 V, ID = 3.5 A)
1.44
1 5.37 MAX.
+0.10 -0.05
4
6.0 0.3 4.4 0.8
RDS(on)2 = 40 m (MAX.) (VGS = 2.5 V, ID = 3.5 A) * Low Ciss : Ciss = 1040 pF (TYP.) * Built-in G-S protection diode * Small and surface mount package (Power SOP8)
1.8 MAX.
0.15
0.05 MIN.
0.5 0.2 0.10
1.27 0.78 MAX. 0.40
+0.10 -0.05
0.12 M
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
PA1701AG
EQUIVARENT CIRCUIT ABSOLUTE MAXIMUM RATINGS (TA = 25C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse)
Note1 Note2
Drain
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
30 12 7.0 28 2.0 150 -55 to + 150
V V A A W C C
Gate Protection Diode Source Gate Body Diode
Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature
Notes 1. PW 10 s, Duty Cycle 1 % 2. Mounted on ceramic substrate of 1200 mm x 1.7mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
2
The information in this document is subject to change without notice.
Document No. G12711EJ1V0DS00 (1st edition) Date Published November 1998 NS CP(K) Printed in Japan
(c)
1998
PA1701A
ELECTRICAL CHARACTERISTICS (TA = 25 C )
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = 4.0 V, ID = 3.5 A VGS = 2.5 V, ID = 3.5 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 3.5 A VDS = 30 V, VGS = 0 V VGS = 12 V, VDS = 0 V VDS = 10 V VGS = 0 V f = 1 MHz ID = 3.5 A VGS(on) = 4.0 V VDD = 15 V RG = 10 ID = 7.0 A VDD = 24 V VGS = 4.0 V IF = 7.0 A, VGS = 0 V IF = 7.0 A, VGS = 0 V di/dt = 100 A/ s 1040 340 150 25 120 73 77 13.2 1.8 5.8 0.77 31 58 0.5 6.0 MIN. TYP. 19 25 0.9 13 10 10 MAX. 27 40 1.5 UNIT m m V S
A A
pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T. RL PG. RG RG = 10 VDD
ID 90 % 90 % ID 0 10 % td(on) ton tr td(off) toff 10 % tf VGS
IG = 2 mA
VGS(on) 90 %
VGS
Wave Form
RL VDD
0
10 %
PG.
50
VGS 0 = 1 s Duty Cycle 1 %
ID
Wave Form
2
PA1701A
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 2.8
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
100 80 60 40 20
2.4 2.0 1.6 1.2 0.8 0.4 0 20 40 60 80
Mounted on ceramic substrate of 1200mm 2 x1.7mm
0
20
40
60
80
100 120 140 160
100 120 140 160
TA - Ambient Temperature - C
TA - Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA 100
d ite Lim 0 V) =1 S
ID(DC) = 7 A ID(pulse) = 28 A
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = 10 V 4V 2.5 V Pulsed
ID - Drain Current - A
10
R D VG (
m
s
10
10
Po we rD
m
s
0
m
s
ID - Drain Current - A
100
S(
o
n)
Pw
20
= 1
1
iss
10
ipa
tio
n
Lim
ite
d
0.1 0.1
TC = 25 C Single Pulse 1 10
0
0.2
0.4
0.6
0.8
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS 100 Pulsed
ID - Drain Current - A
10
1 TA = 125C 75C 25C -25C VDS = 10 V 3 4
0.1
0
1
2
VGS - Gate to Source Voltage - V
3
PA1701A
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000
rth(t) - Transient Thermal Resistance - C/W
100
Rth(ch-a) = 62.5C/W
10
1
0.1
0.01 0.001
Mounted on ceramic substrate of 1200mm2 x 1.7mm Single Pulse
10
100
1m
10 m
100 m
1
10
100
1 000
PW - Pulse Width - s
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 70 60 ID = 3.5 A 50 40 30 20 10 0 5 10 15 Pulsed
|yfs| - Forward Transfer Admittance - S
100
VDS =10 V Pulsed
10
TA = -25C 25C 75C 125C
1
0.1
1
10
100
RDS(on) - Drain to Source On-state Resistance - m
VGS - Gate to Source Voltage - V
ID- Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
VGS(off) - Gate to Source Cut-off Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 80 70 60 50 40 30 20 10 0 1 10 ID - Drain Current - A 100 VGS = 2.5 V 4V 10 V Pulsed
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 1.8 1.5 VDS =10 V ID =1 mA
1.0
0.5
0
- 20
0
20 40 60
80 100 120 140
Tch - Channel Temperature - C
4
PA1701A
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed
IF - Diode Forward Current - A
40
VGS = 2.5 V
100 0V 10 VGS =10 V
30
4V 10 V
20
1
10 ID = 3.5 A - 20 0 20 40 60 80 100 120
0.1 0 0.5 1.0
0
Tch - Channel Temperature - C
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000
SWITCHING CHARACTERISTICS 1 000
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
VGS = 0 V f = 1 MHz
tr 100 tf td(off) td(on) 10
1000
Ciss
Coss 100 Crss
10 0.1
1
10
30
100
1 0.1
VDS = 15 V VGS = 4 V RG = 10 1 10 100 ID - Drain Current - A
VDS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 000
trr - Reverse Recovery Diode - ns
VDS - Drain to Source Voltage - V
30
100
VDD = 24 V 15 V 6V
VGS
6 5 4 3
20
10
10 VDS 0 2 4 6 8 10 12 14
2 1 0 16
1 0.1
1
10
100
ID - Drain Current - A
QG - Gate Charge - nC
VGS - Gate to Source Voltage - V
di/dt = 100A/s VGS = 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40 ID = 7 A
5
PA1701A
[MEMO]
6
PA1701A
[MEMO]
7
PA1701A
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96. 5

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